Toshiba and NEC Develop World's Fastest, Highest Density MRAM

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Mechanism of reduced electrical resistance in wiring for writing: The resistance per wiring was reduced by 38 by adopting new wiring method which forks writing current.
Mechanism of reduced electrical resistance in wiring for writing: The resistance per wiring was reduced by 38% by adopting new wiring method which forks writing current.

Toshiba Corporation and NEC Corporation today announced that they have developed a magnetoresistive random access memory (MRAM) that combines the highest density with the fastest read and write speed yet achieved. The new MRAM achieves a 16-megabit density and a read and write speed of 200-megabytes a second, and also secures low voltage operation of 1.8V.


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