Nanoscale blasting adjusts resistance in magnetic sensors

Cartoon illustrates new NIST technique for selectively modifying resistance of a semiconductor device layer. (Top) First layer -- in this case a composite of copper and cobalt -- and an insulating buffer layer of aluminum oxide is deposited. Buffer is about one nanometer thick. (Middle) Highly charged xenon +44 ions strike the buffer layer, digging nanoscale pits. (Bottom) Top conducting layer of cobalt and copper is deposited. Pits reduce the electrical resistance of the layers and may function as nanoscale GMR sensors embedded in a MTJ sensor. Credit: NIST