Toshiba develops new MRAM device which opens the way to giga-bits capacity

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Cell Structure. A material with perpendicular magnetic anisotropy which is used for recording media and a type of cobalt-iron is employed in the magnetic layer with magnesium oxide in the insulating layer and cobalt-iron-boron in the interface layers ...
Cell Structure. A material with perpendicular magnetic anisotropy, which is used for recording media and a type of cobalt-iron, is employed in the magnetic layer, with magnesium oxide in the insulating layer and cobalt-iron-boron in the interface layers. Credit: Toshiba

Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device.


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