Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V

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Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V
Panasonic today announced the development of a Gallium Nitride (GaN) power transistor with the ultra high breakdown voltage over 10000V. This breakdown voltage is more than 5 times higher than previously reported highest values in GaN power transistors. The new GaN transistor is applicable to high-voltage and low-loss power switching devices.


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