IBM Alliances Announce Advancement in High-K/Metal Gate Technology

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The worldacutes smallest SRAM cell using High-KMetal Gate (0.15um2). Credit: IBM
The world's smallest SRAM cell using High-K/Metal Gate (<0.15um2). Credit: IBM

IBM and its joint development partners -- AMD, Chartered Semiconductor Manufacturing, Freescale, Infineon, and Samsung -- announced an innovative approach to speed the implementation of a breakthrough material known as "high-k/metal gate" in next generation 32 nanometer (32nm) computer chips.


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