IMEC, AIXTRON set important step towards low-cost GaN power devices

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Thickness uniformity map of a 1m GaN layer deposited on 200mm Si(111) using an AlNAlGaN buffer. The average thickness measured in-situ is 1008nm for the full wafer excluding a 5mm edge.
Thickness uniformity map of a 1µm GaN layer deposited on 200mm Si(111) using an AlN/AlGaN buffer. The average thickness measured in-situ is 1008nm for the full wafer excluding a 5mm edge.

IMEC, Europe's leading independent research center in the field of nanoelectronics, and AIXTRON, the world leader in metal-organic chemical-vapor deposition (MOCVD) equipment, have demonstrated the growth of high-quality and uniform AlGaN/GaN heterostructures on 200mm silicon wafers. This demonstration is a milestone towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.


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