Novel memory device is set to rival transistor-switched silicon-based memory

NEM switch fabrication steps. I. Metallic multi-walled nanotubes are grown from catalyst dots defined by electron-beam lithography. II. The nanotubes are coated with an insulating layer of silicon nitride. III. Chromium is sputtered to form the capacitor on the source electrode. IV. A wet etch exposes the nanotube on the drain electrode, which is the moving part of the switch.