Exposing the Sensitivity of Extreme Ultraviolet Photoresists

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NIST researchers exposed a 300 mm silicon wafer with incrementally increasing doses of extreme ultraviolet light (EUV) in 15 areas. After the wafer was developed the team determined that the seventh exposure was the minimum dose required (E0) to full ...
NIST researchers exposed a 300 mm silicon wafer with incrementally increasing doses of extreme ultraviolet light (EUV) in 15 areas. After the wafer was developed, the team determined that the seventh exposure was the minimum dose required (E0) to fully remove the resist. Credit: NIST

Researchers at the National Institute of Standards and Technology (NIST) have confirmed that the photoresists used in next-generation semiconductor manufacturing processes now under development are twice as sensitive as previously believed. This finding, announced at a workshop last month,* has attracted considerable interest because of its implications for future manufacturing. If the photoresists are twice as sensitive as previously thought, then they are close to having the sensitivity required for high volume manufacturing, but the flip side is that the extreme ultraviolet optical systems in the demonstration tools currently being used are only about half as effective as believed.



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