New Nanowire-Based Memory Could Beef Up Information Storage

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A scanning electron microscope image of a cross section of a GeTeGesub2subSbsub2subTesub5sub nanowire (the arrow points to the Gesub2subSbsub2subTesub5sub core).
A scanning electron microscope image of a cross section of a GeTe/Ge2Sb2Te5 nanowire (the arrow points to the Ge2Sb2Te5 core).

Researchers from the University of Pennsylvania have created a type of nanowire-based information storage device that is capable of storing three bit values rather than the usual two—that is, "0," "1," and "2" instead of just "0" and "1." This ability could lead to a new generation of high-capacity information storage for electronic devices.


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