IMEC reports major progress in EUV

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32nm SRAM device after EUV ADT exposures with various doses and after oxide etch.
32nm SRAM device after EUV ADT exposures with various doses and after oxide etch.

IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML’s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, using its most advanced deposition systems, was key to fabricating the ultra-small circuit structures. IMEC also completed the integration and site acceptance test of the EUV ADT in its 300mm clean room.


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