Operating quantum memory at room temperature

Quantum dots, along with quantum wires, have been attracting notice over the past decade as possible building blocks of quantum information processing. Indium arsenide quantum dots (InAs) can be used for memory operations in devices made from gallium arsenide and aluminum gallium arsenide (known as GaAs/AlGaAs devices). The problem is that at room temperature – the experiments are usually done at lower temperatures, the memory operation of these devices suffers, unless there are multiple quantum dot layers.