Infineon Presents Cutting Edge Research Results in Non-Volatile Memory Technologies

Munich, Germany – June 22, 2004 – Infineon Technologies is leading in the development of new non-volatile memory technologies. At the 2004 Symposia on VLSI Technologies and Circuits, June 15 - 19 in Honolulu, Hawaii, Infineon Technologies presented promising results on a broad range of non-volatile technologies for future memory products. Read about:

- 110nm NROM Technology for Code and Data Flash Products
- Infineon Explores FinFET Sub-40nm Oxide-Nitride-Oxide Transistors for High-Density Flash memory in the 16Gbit Range
- FeRAM - Small and Highly Scalable 3-Dimensional FeRAM Cell with Vertical Capacitor