Infineon Achieves Breakthrough in DRAM Trench Technology

Infineon Technologies AG presented a highly manufacturable 70nm process technology for future DRAM generations that is based on deep trench (DT) cells on 300mm wafers at the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco (December 13 - 15, 2004). Around 25 per cent of the worldwide DRAM production today is based on trench technology. In the paper, Infineon shows the full integration scheme and the major technology features which include for the first time high-k dielectric material in a trench based DRAM manufacturing process. The results of the Infineon 70nm DRAM program represent a technological breakthrough and show the scalability of trench technology.