Intel Builds Static RAM on 65nm Process – Set for Production in 2005

Intel is successfully demonstrating its next-generation 65-nanometer semiconductor process at the same time it is rolling out the industry's first high-volume 90nm production.
Intel expects to ramp its 65nm process in 2005 — once again being first in the industry to produce next-generation microprocessors.
Using this next-generation process, Intel has fabricated fully functional 4-megabit static RAMs (SRAMs) with ultra-small memory cells. Smaller cells mean that processors can have larger caches that improve performance. The SRAM cells have a solid noise margin down to 0.7 volts, which indicates very robust circuit operation.