Soitec, ATDF to Develop Multi-Gate Field Effect Transistors (MuGFETs) for 45-nm Technology and Beyond

In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility -- the new independent subsidiary of SEMATECH for advanced semiconductor research and development. Together with two leading semiconductor manufacturers and a number of equipment suppliers and U.S.-based universities, Soitec has been involved for over a year in this advanced R&D program at ATDF, which specializes in services involving technology development, wafer processing, and analytical and electrical testing. The ATDF development program focuses on multi-gate field effect transistor (MuGFET) technology for the 45-nm node and below. MuGFET is a generic term used to describe a variety of new, multiple-gate field effect transistors, including CMOS FinFETs (FETs with "fin-shaped" transistors) and triple-gate devices.