Samsung Delivers Next Generation Memory Modules for High Density Data Processing

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced sample production of the next-generation memory module for servers and workstations –a fully buffered, dual in-line memory module (FB DIMM) based on DDR2 technology. The FB DIMM sharply boosts memory density and bandwidth of registered DIMMs to improve data processing.
An Advanced Memory Buffer (AMB) chip has been added to each memory module to enable the use of high- and low-speed interfaces. The buffer can generate speeds from 3.2Gigabits per second (Gbps) to 4.8Gbps. The FB DIMM can attain a maximum speed of 4.8Gbps that is double the speed of a DDR2-400 registered DIMM, when utilizing DDR2-800 components.

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All News summaries for March 16, 2005