Engineers Achieve Breakthroughs Enabling Implementation of High-k Dielectrics at 45 nm Technology Node

Using a selected set of tools and processes, Sematech engineers have achieved twin breakthroughs in channel mobility and reliability of high-k/metal gate transistors, putting high-k technology for CMOS within reach at the 45 nm technology node.
The Sematech advance involves a titanium nitride (TiN) metal gate on a hafnium silicate (HfSiO) dielectric with an equivalent oxide thickness (EOT) of roughly 10 angstroms (Å), with mobility at 90 percent of the universal mobility curve for silicon dioxide (SiO₂), the historic gate dielectric material. These EOT and mobility metrics meet the 45 nm technology node specifications listed by the International Technology Roadmap for Semiconductors (ITRS).