Toshiba Adds New High-Gain, High-Linearity GaAs FETs For WiMAX Equipment

In an expansion of its terrestrial communication microwave device offering, Toshiba America Electronic Components, Inc. (TAEC) announced today at the IEEE MTT-S International Microwave Symposium that the company is now offering new high gain, high linearity internally matched gallium arsenide (GaAs) field effect transistors (FETs) targeted for use in amplifiers and microwave digital radios for 3.5GHz and 5GHz fixed wireless access (FWA) systems including Wireless Interoperability for Microwave Access (WiMAX) and the Unlicensed National Information Infrastructure (U-NII) compatible systems. Five new GaAs FETs, developed by Toshiba Corp. (Toshiba), provide a range of output power and gain to meet designers' requirements.