New Concept for Novel Low-k Film Compatible with 45nm-node LSI Interconnects

NEC and MIRAI Project today announced the joint development of a low dielectric-constant (low-k) film, which is realized through a newly developed concept, and is expected to lead to power reduction in advanced LSIs. The low-k film contains very tiny, molecular-scale pores introduced by a newly developed novel molecular-pore-stacking ("MPS") technique. Its feasibility to ultrafine copper interconnects in future 45nm-node LSIs has been confirmed, achieving double the interconnect density as that of 65nm-LSIs and a 16% reduction in interconnect parasitic capacitance, which is essentially the source of active power consumption.