IMEC to create solutions for sub-45nm CMOS scaling
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Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances in MuGFETs and gate-stack technology paired with lithography improvements also resulted in a new record for a fully working 6-transistor SRAM cell of just 0.274µm2 in area.
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