Nanotechnology Breakthrough: Gallium Nitride Nanowires Grow Direction is Under Control

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GaN-nanowires
A significant breakthrough in the development of the highly prized semiconductor gallium nitride as a building block for nanotechnology has been achieved by a team of scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California at Berkeley. For the first time ever, the researchers have been able control the direction in which a gallium nitride nanowire grows.


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