C₆₀ increases gain in organic-metal-semiconductor transistors

I. A. Hümmelgen and group of scientists from Brazil and UK implemented C₆₀ to metal-base transistor technology.
They used evaporated C₆₀ as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. This metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.
Recent article has been published in Applied Physics Letters (Vol. 84, No. 20, pp. 3978–3980)

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All News summaries for May 04, 2004