IMEC demonstrates growth of GaN high-electron mobility transistors on 150 mm silicon

IMEC, Europe's leading independent nanoelectronics and nanotechnology research institute, has demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) on 150mm silicon (Si) wafers. The process paves the way to low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.