Trenches create memory space

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The 300-mm wafers are coated with an etch-resistant film in the cleanroom. Currently being tested: Masks made of aluminum nitride instead of silicon dioxide. Fraunhofer IKTS
The 300-mm wafers are coated with an etch-resistant film in the cleanroom. Currently being tested: Masks made of aluminum nitride instead of silicon dioxide. © Fraunhofer IKTS

The requirements are tightening up. Computers are having to become more and more efficient. A new technology boosts memory capacity: etching the silicon wafer creates deep trenches that increase its capacity to store data.


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