Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 50-nanometer (nm) DDR2 DRAM (dynamic random access memory) chip, which will increase production efficiency from the 60nm level by 55 percent. The new 1-gigabit (Gb) DRAM incorporates advanced technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities.
AMD today introduced the industry’s first energy-efficient x86 server processors with four processing cores and an integrated memory controller all in a low 55-watt ACP thermal envelope. Blade and rack systems based on five ...
Robots designed to toss pool-noodle trees into a river of ping-pong balls ruled over competitors focused on rescuing fuzzy toy beavers in this year's 2.007 contest, "Da (yes) MIT, or Save the Baby Beavers," ...
(AP) -- Apple Inc. said Monday its online stores in the U.S. and U.K. are sold out of the iPhone, a sign supplies are being winnowed ahead of the launch of the device's next generation featuring faster Internet ...
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