Beyond silicon: Researchers demonstrate new transistor technology

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This image shows a cross sectional view of the indium gallium arsenide transistor fabricated at MIT. The critical dimension is 60 nanometers similar to that of state-of-the-art silicon transistors. Photo courtesy Jesus del Alamo
This image shows a cross sectional view of the indium gallium arsenide transistor fabricated at MIT. The critical dimension is 60 nanometers, similar to that of state-of-the-art silicon transistors. Photo courtesy / Jesus del Alamo

MIT engineers have demonstrated a technology that could introduce an important new phase of the microelectronics revolution that has already brought us iPods, laptops and much more.


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