World's fastest transistor approaches goal of terahertz device

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Scanning electron microscope images of original base-collector mesa (top) and improved design (bottom). Credit: University of Illinois at Urbana-Champaign
Scanning electron microscope images of original base-collector mesa (top) and improved design (bottom). Credit: University of Illinois at Urbana-Champaign

Scientists at the University of Illinois at Urbana-Champaign have again broken their own speed record for the world’s fastest transistor. With a frequency of 845 gigahertz, their latest device is approximately 300 gigahertz faster than transistors built by other research groups, and approaches the goal of a terahertz device.


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