Scientists Hand-Make Devices Smaller than 10 Nanometers

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Two intersecting nanowires (left panel) were made into a four-terminal nanogap transistor (right panel) using the TEBAL method.
Two intersecting nanowires (left panel) were made into a four-terminal nanogap transistor (right panel) using the TEBAL method.

A research team from the University of Pennsylvania has used an electron beam to hand-carve ultra-small metal structures and devices, all with dimensions below 10 nanometers, from very thin metal sheets. Their technique could impact the development of many nanotechnologies, including nanoelectronics.


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