Magnetic memory design breakthrough can lead to faster computers

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Fig. 1: Top view scanning electron microscope (SEM) micrographs of (a) symmetric and (b) asymmetric nanorings fabricated from r 50 nm PS spheres at 0 and 14 ion milling angles respectively. Inset is the composition sensitive SEM image of the ring b ...
Fig. 1: Top view scanning electron microscope (SEM) micrographs of (a) symmetric and (b) asymmetric nanorings fabricated from /r/ = 50 nm PS spheres at 0° and 14° / /ion milling angles, respectively. Inset is the composition sensitive SEM image of the ring, bright areas represent Co.

Imagine a computer that doesn't lose data even in a sudden power outage, or a coin-sized hard drive that could store 100 or more movies. Magnetic random-access memory, or MRAM, could make these possible, and would also offer numerous other advantages. It would, for instance, operate at much faster than the speed of ordinary memory but consume 99 percent less energy.


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