Novel gate dielectric materials: perfection is not enough

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On the left is an Illustration of the displacement of hafnium atoms (white) in the structure of hafnium oxide to accommodate the presence of the self-trapped hole in the oxygen atom (red). On the right is the quantum mechanics view of the probability ...
On the left is an Illustration of the displacement of hafnium atoms (white) in the structure of hafnium oxide to accommodate the presence of the self-trapped hole in the oxygen atom (red). On the right is the quantum mechanics view of the probability of finding a hole near certain atoms (larger blue structures represent higher probability). Credit: London Centre for Nanotechnology

For the first time theoretical modeling has provided a glimpse into how promising dielectric materials are able to trap charges, something which may affect the performance of advanced electronic devices. This is revealed in a paper published on the 12th October in Physical Review Letters by researchers at the London Centre for Nanotechnology and SEMATECH, a company in Austin, Texas.


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