IMEC increases performance of high-k metal gate planar CMOS and FinFETs

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Ring oscillator realized with hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node. Credit: IMEC
Ring oscillator realized with hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node. Credit: IMEC

At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node.


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