Atomic-Level Mechanisms of Phase-Change Memory Materials Revealed

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A model of an amorphous form of the memory material Gesub2subSbsub2subTesub5sub showing the square molecular rings that nucleate the crystallization process.
A model of an amorphous form of the memory material Ge2Sb2Te5, showing the square molecular rings that nucleate the crystallization process.

Scientists from the University of Cambridge in the UK have uncovered the atomic-level interactions that occur when a class of “phase-change” memory materials stores information. Their work, reported in the March 23 online edition of Nature Materials, may open up new avenues for research into these fascinating materials, possibly leading to a new generation of “super” memory materials for electronic devices.


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