Development of Transistor with New Metal Gate Electrode & High-K Gate Dielectric

NEC today announced the development of a transistor featuring a new gate stack structure using a Hf-based high-k dielectric (*1) and a metal gate electrode (*2), which simultaneously realizes significant gate leakage suppression and improvement in transistor operation speed. This newly developed gate stack boasts excellent characteristics, well satisfying the requirements of 45nm-node low power transistors, and will contribute to the development of future LSIs that can meet the needs of advanced mobile terminals and digital-consumer electronics equipment due to their ultra low power consumption.