SRAM technology with 0.8V operation voltage

Hitachi, Ltd.and Renesas Technology Corp. announced that they have developed low-voltage embedded SRAM technology for SoC's (system-on-a-chip) beyond the 90-nm process node. Using new circuit techniques, the power lines of SRAM cells were placed in a "floating state" (detached from the power supply) during write operations, and 0.8V operation was confirmed. This development will help overcome the barrier to maintaining low-voltage operation which is becoming increasingly more difficult to achieve due to process scaling, and is expected to become fundamental technology for achieving both high-performance and low-power operation in SoCs embedded in information devices, which are supporting the growth of the ubiquitous society.