Renesas and Hitachi Develop High-Speed Programming Technologies for Multilevel AG-AND Flash Memories

Renesas Technology Corp. and Hitachi, Ltd. today announced that they have co-developed two high-speed programming technologies for AG-AND (Assist Gate-AND) flash memory*1 devices, high-speed data storage built with multilevel*2 cell technology. Details of these new technologies are presented at the 2005 Symposia on VLSI Technology and Circuits, an international conference on LSI devices and circuits that opened in Kyoto, Japan on June 14, 2005.