Engineers Identify Materials for nMOS Metal Gate Electrodes

User rating: 2.4 / 5 after 5 vote(s)

Sematech engineers have identified metal electrode materials that can be used to build reliable nMOS transistors with high‑k dielectric – a major milestone in the quest to fabricate working CMOS devices using metal gate and high-k dielectric stacks.


Full story »

All News summaries from Technology news
All News summaries for March 30, 2006