Philips announces a silicon-based BiCMOS technology for emerging microwave applications

Royal Philips Electronics today introduced QUBiC4X, the latest addition to its highly successful QUBiC4 family of high-performance BiCMOS (Bipolar CMOS) process technologies. Based on silicon-germanium-carbon (SiGe:C) technology, this new process features bipolar transistors with fT figures in excess of 130 GHz, suiting it to microwave applications in the 10 GHz to 30 GHz range such as satellite TV receivers and automotive collision avoidance radars. Its ultra-low noise figure suits the process for use in sensitive RF receivers such as those required in high-performance mobile phones.