IBM Reveals Breakthrough eDRAM Memory Technology

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IBM eDRAM test chip. IBM announced a major breakthrough in microchip design that will more than triple the amount of memory contained on a single high-end chip. With the advent of multi-core chips memory has become an increasingly critical aspect of  ...
IBM eDRAM test chip. IBM announced a major breakthrough in microchip design that will more than triple the amount of memory contained on a single high-end chip. With the advent of multi-core chips, memory has become an increasingly critical aspect of microprocessor performance. This prototype eDRAM (Embedded Dynamic Random Access Memory) contains over 12 million bits and high-performance logic. It will be available in IBM products beginning next year. Credit: IBM

In papers presented at the International Solid State Circuits Conference, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (Embedded Dynamic Random Access Memory). IBM's new microchip technology will more than triple the amount of memory stored on chips and double the performance of computer processors. It will be available in 2008.


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All News summaries for February 14, 2007