Magnetic memory design breakthrough can lead to faster computers

User rating: 4.4 / 5 after 50 vote(s)

Fig. 1: Top view scanning electron microscope (SEM) micrographs of (a) symmetric and (b) asymmetric nanorings fabricated from r 50 nm PS spheres at 0 and 14 ion milling angles respectively. Inset is the composition sensitive SEM image of the ring b ...
Fig. 1: Top view scanning electron microscope (SEM) micrographs of (a) symmetric and (b) asymmetric nanorings fabricated from /r/ = 50 nm PS spheres at 0° and 14° / /ion milling angles, respectively. Inset is the composition sensitive SEM image of the ring, bright areas represent Co.

Imagine a computer that doesn't lose data even in a sudden power outage, or a coin-sized hard drive that could store 100 or more movies. Magnetic random-access memory, or MRAM, could make these possible, and would also offer numerous other advantages. It would, for instance, operate at much faster than the speed of ordinary memory but consume 99 percent less energy.


Full story »
All News summaries from Physics news
All News summaries for January 11, 2006
Goto Archive PhysOrg Forum Goto Archive Video Goto Archive Editorials Goto Archive Free Magazines Goto Archive Newsletter

News Archive