http://www.physorg.com/ en-us Physorg.com internet news portal provides the latest news on science including: Physics, Nanotechnology, Life Sciences, Space Science, Earth Science, Environment, Health and Medicine. (PhysOrg.com) -- Ph.D. candidate Sataporn Pornpromlikit played a critical role in research at UC San Diego that made a big impact at a recent conference, and might provide manufacturers with the means for making cell phones both smaller and cheaper. http://www.physorg.com/news168271189.html Technology Fri, 31 Jul 2009 15:00:20 EST news168271189 (PhysOrg.com) -- To continue to improve semiconductor devices, such as transistors, which form the backbone of the consumer electronics industry, researchers need to be able to control the movement and density of the electric charge within them. http://www.physorg.com/news146752463.html Physics Mon, 24 Nov 2008 12:34:23 EST news146752463 Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 graduate`s invention could replace one of the most common pieces of technology in the world -the silicon transistor for high-power and high-temperature electronics. http://www.physorg.com/news129903497.html Technology Tue, 13 May 2008 13:18:17 EST news129903497 NXP Semiconductors, the independent company founded by Philips, today announced a new range of small signal MOSFET devices housed in one of the world`s smallest packages, the SOT883. Boasting an ultra-small 1.0 x 0.6 mm footprint, NXP`s SOT883 MOSFETs deliver power dissipation and performance comparable to SOT23, while occupying only 14 percent of the printed circuit board space. http://www.physorg.com/news123172620.html Technology Mon, 25 Feb 2008 14:37:00 EST news123172620 Nitrogen incorporation in thin HfO2/SiO2 film systems representative of high-k gate dielectric layers in advanced metal-oxide semiconductor field-effect transistors (MOSFETs) has been investigated by synchrotron x-ray photoelectron spectroscopy to elucidate variations in chemical composition between samples annealed in NH3 and N2 ambient as a function of temperature. In addition, depth profiling of core-level binding energy spectra has been obtained by variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) with tunable photon energy. An HfO2/SiO2 `interface effect` has been detected in the Si 1s spectra characterized by a shift of the Si4+ feature to lower binding energy with no corresponding chemical state change observed in the Hf 4f spectra acquired over a broad range of electron take-off angles. http://www.physorg.com/news99761580.html Technology Wed, 30 May 2007 16:33:00 EST news99761580 Researchers from TU Delft and the FOM Foundation (Netherlands) have successfully measured transport through a single atom in a transistor. This research offers new insights into the behaviour of so-called dopant atoms in silicon. http://www.physorg.com/news83403452.html Physics Wed, 22 Nov 2006 07:37:32 EST news83403452 Pushed by the scaling limits of silicon-based devices, Sematech engineers have launched a project to investigate alternative materials to Si in MOSFET channels, the critical pathways that allow electrical signals to flow across transistors. http://www.physorg.com/news11596.html Technology Thu, 09 Mar 2006 14:44:46 EST news11596 Scientists have demonstrated the first reproducible, controllable silicon transistors that are turned on and off by the motion of individual electrons. The experimental devices, designed and fabricated at NTT Corp. of Japan and tested at NIST, may have applications in low-power nanoelectronics, particularly as next-generation integrated circuits for logic operations (as opposed to simpler memory tasks). http://www.physorg.com/news10506.html Physics Thu, 02 Feb 2006 15:53:50 EST news10506 Freescale Semiconductor has developed the industry's first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect transistor (MOSFET) technology and its scaling laws. http://www.physorg.com/news10377.html Technology Mon, 30 Jan 2006 14:54:05 EST news10377 Philips and the Pennsylvania State University today announced that their jointly developed PSP (Penn State Philips) complementary metal-oxide semiconductor (CMOS) transistor model has been selected by the Compact Model Council (CMC) as the industry-wide standard for future CMOS chip design. Founded in 1996 and comprised of 31 leading semiconductor companies and circuit simulator suppliers, the CMC is the world`s foremost authority for the standardization, implementation and use of transistor models. http://www.physorg.com/news9228.html Nanotechnology Tue, 20 Dec 2005 16:04:56 EST news9228 UMC today announced that its Central Research and Development Division (CRD) has successfully developed an Ultimate Spacer Process (USP) technology that simultaneously enhances NMOS and PMOS device performance. Devices fabricated at UMC using USP exhibited drive current improvements of 15% for NMOS and 7% for PMOS, while maintaining overall process simplicity. This accomplishment is instrumental in achieving performance improvement during increasingly difficult CMOS scaling situations. http://www.physorg.com/news8848.html Technology Wed, 07 Dec 2005 14:53:08 EST news8848 Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric. http://www.physorg.com/news8528.html Physics Mon, 28 Nov 2005 14:13:41 EST news8528 New sensor systems being developed will help treat cancer and improve the accuracy and reliability of existing radiation treatments. They should help improve patient care and outcomes. The results will go straight to commercialisation when finalised next year. http://www.physorg.com/news7796.html Technology Wed, 02 Nov 2005 10:33:06 EST news7796 NEC Corporation ("NEC") today announced the development of a transistor featuring a new gate stack structure using a hafnium ("Hf")-based, high-k dielectric and a metal gate electrode, which simultaneously realize significant gate leakage suppression and improvement in transistor operation speed. The newly developed metal gate/high-k structure is stable even through the conventional CMOS manufacturing process and realizes transistor life time of up to 10 years with practical usage presumed at 85oC. http://www.physorg.com/news4584.html Technology Thu, 16 Jun 2005 17:59:47 EST news4584 Industryâ€(TM)s first double-gate transistor model enables smaller, more powerful silicon products that use less energyFreescale Semiconductor and the University of Florida have created the industry's first double-gate transistor model. The double-gate transistor version of interest to Freescale, called FinFET, is engineered to pack more computing power into less space and reduce power consumption, while using existing semiconductor manufacturing processes. http://www.physorg.com/news4354.html Technology Wed, 01 Jun 2005 16:14:35 EST news4354