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Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world`s smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs). http://www.physorg.com/news148751844.html Technology Wed, 17 Dec 2008 15:57:24 EST news148751844 Integrated Silicon Solution Inc. said Thursday it had acquired the complete SRAM product line produced by Alliance Semiconductor. http://www.physorg.com/news71404894.html Technology Thu, 06 Jul 2006 11:41:34 EST news71404894 South Korea's anti-trust watchdog said Monday it has found no evidence that leading chipmakers in South Korea and other countries colluded to fix prices. http://www.physorg.com/news159425559.html Technology Mon, 20 Apr 2009 05:53:02 EST news159425559 (PhysOrg.com) -- IBM and its development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- today announced the first working static random access memory (SRAM) for the 22 nanometer technology node, the world's first reported working cell built at its 300mm research facility in Albany, NY. http://www.physorg.com/news138293778.html Nanotechnology Mon, 18 Aug 2008 15:56:18 EST news138293778 UMC, a leading global semiconductor foundry, today announced that it has produced functional 65nm customer products incorporating URAM, the company's patented embedded DRAM (eDRAM) technology. http://www.physorg.com/news137081222.html Technology Mon, 04 Aug 2008 15:07:02 EST news137081222 Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes. http://www.physorg.com/news170353677.html Technology Mon, 24 Aug 2009 19:10:01 EST news170353677 Researchers have unveiled a SRAM test device for battery-powered devices with the lowest voltage requirements ever produced. http://www.physorg.com/news10697.html Electronics Thu, 09 Feb 2006 11:07:12 EST news10697 NEC Corporation today announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed. http://www.physorg.com/news115651746.html Technology Fri, 30 Nov 2007 13:29:06 EST news115651746 Intel President and CEO Paul Otellini today displayed a silicon wafer containing the world's first working chips built on 22nm process technology. The 22nm test circuits include both SRAM memory as well as logic circuits to be used in future Intel microprocessors. http://www.physorg.com/news172852816.html Technology Tue, 22 Sep 2009 16:10:01 EST news172852816 Toshiba Corporation today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology. http://www.physorg.com/news148843305.html Technology Thu, 18 Dec 2008 17:21:45 EST news148843305 UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process technology. UMC utilized advanced double-patterning immersion lithography and strained silicon technology to produce the chips, which feature very small six-transistor SRAM cell sizes of approximately 0.122 um2. http://www.physorg.com/news144347569.html Technology Mon, 27 Oct 2008 17:32:49 EST news144347569 Renesas Technology and Matsushita Electric Industrial today announced the development of a technique that achieves stable operation with 45nm process generation bulk CMOS for SRAM (Static Random Access Memory) that can be embedded in SoC (system-on-a-chip) devices and microprocessors (MPUs). http://www.physorg.com/news90598848.html Technology Tue, 13 Feb 2007 14:20:48 EST news90598848 Intel said Wednesday it had produced the semiconductor industry's first chip using milestone 45-nanometer process technology. http://www.physorg.com/news10230.html Electronics Wed, 25 Jan 2006 14:16:20 EST news10230 Hitachi, Ltd.and Renesas Technology Corp. announced that they have developed low-voltage embedded SRAM technology for SoC's (system-on-a-chip) beyond the 90-nm process node. Using new circuit techniques, the power lines of SRAM cells were placed in a "floating state" (detached from the power supply) during write operations, and 0.8V operation was confirmed. This development will help overcome the barrier to maintaining low-voltage operation which is becoming increasingly more difficult to achieve due to process scaling, and is expected to become fundamental technology for achieving both high-performance and low-power operation in SoCs embedded in information devices, which are supporting the growth of the ubiquitous society. http://www.physorg.com/news3095.html Technology Thu, 17 Feb 2005 14:13:38 EST news3095 IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML`s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, using its most advanced deposition systems, was key to fabricating the ultra-small circuit structures. IMEC also completed the integration and site acceptance test of the EUV ADT in its 300mm clean room. http://www.physorg.com/news135270280.html Technology Mon, 14 Jul 2008 16:04:40 EST news135270280