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<title>PhysOrg.com - latest science and technology news stories</title>
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<description>Physorg.com internet news portal provides the latest news on science including: Physics, Nanotechnology, Life Sciences, Space Science, Earth Science, Environment, Health and Medicine.</description>

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     <title>SKoreans demonstrate spin-injected field effect transistor</title>
   	 <description> South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.</description>
     <link>http://www.physorg.com/news172478181.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Fri, 18 Sep 2009 07:37:20 EST</pubDate>
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     <title>Michigan Tech Team Models Molecular Transistor</title>
   	 <description>(PhysOrg.com) -- Electronic gadgetry gets tinier and more powerful all the time, but at some point, the transistors and myriad other component parts will get so little they won't work. That's because when things get really small, the regular rules of Newtonian physics quit and the weird rules of quantum mechanics kick in. When that happens, as physics professor and chair Ravindra Pandey puts it, "everything goes haywire."</description>
     <link>http://www.physorg.com/news169397882.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Thu, 13 Aug 2009 15:58:43 EST</pubDate>
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     <title>AMO Manufactures First Graphene Transistors</title>
   	 <description>In the scope of his innovative project ALEGRA the AMO nanoelectronics group of Dr. Max Lemme was able to manufacture top-gated transistor-like field-effect devices from monolayer graphene.</description>
     <link>http://www.physorg.com/news90170453.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Thu, 08 Feb 2007 15:20:53 EST</pubDate>
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     <title>S.Korea develop the smallest transistors</title>
   	 <description>South Korean scientists and the national institute of technology have developed a 3-nanometer-wide transistor, the smallest of its kind in the world. </description>
     <link>http://www.physorg.com/news11719.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 14 Mar 2006 10:08:24 EST</pubDate>
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     <title>Portuguese team makes first paper based transistor</title>
   	 <description>(PhysOrg.com) -- Elvira Fortunato and colleagues from the Centro de Investigação de Materiais (Cenimat/I3N), at Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, made the first Field Effect Transistor (FET) with a paper "interstrate" layer.</description>
     <link>http://www.physorg.com/news135927474.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 22 Jul 2008 06:37:54 EST</pubDate>
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     <title>Scientists Develop World's Fastest Graphene Transistor</title>
   	 <description>(PhysOrg.com) -- IBM Researchers today announced that they demonstrated the operation of graphene field-effect transistors at GHz frequencies, and achieved the highest frequencies reported so far using this novel non-silicon electronic material. </description>
     <link>http://www.physorg.com/news148916104.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Fri, 19 Dec 2008 13:35:04 EST</pubDate>
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     <title>Could a paper transistor offer an alternative to silicon?</title>
   	 <description>(PhysOrg.com) -- As technology advances, scientists look for ways to enhance electronic applications and devices. Indeed, electronics are getting smaller and more diverse. And as this happens, there is an increased requirement for flexibility in transistors, which make the electronic devices we desire work. Unfortunately, silicon and polymers may not fulfill the requirements needed to advance on to the transistors of the future.</description>
     <link>http://www.physorg.com/news172837799.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Tue, 22 Sep 2009 11:30:32 EST</pubDate>
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     <title>Rensselaer student invents alternative to silicon chip</title>
   	 <description>Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 graduate`s invention could replace one of the most common pieces of technology in the world -the silicon transistor for high-power and high-temperature electronics.</description>
     <link>http://www.physorg.com/news129903497.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 13 May 2008 13:18:17 EST</pubDate>
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     <title>Carbon-Nanotube Memory that Really Competes</title>
   	 <description>(PhysOrg.com) -- Researchers in Finland have created a form of carbon-nanotube based information storage that is comparable in speed to a type of memory commonly used in memory cards and USB "jump" drives.</description>
     <link>http://www.physorg.com/news152202897.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 26 Jan 2009 14:35:49 EST</pubDate>
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     <title>GaAs self-assembled nanowires could make chips smaller and faster</title>
   	 <description>(PhysOrg.com) -- Researchers at the University of Illinois have found a new way to make transistors smaller and faster. The technique uses self-assembled, self-aligned, and defect-free nanowire channels made of gallium arsenide.</description>
     <link>http://www.physorg.com/news159453806.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 20 Apr 2009 13:43:49 EST</pubDate>
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     <title>Toshiba develops essential technology for spintronics-based MOS field-effect transistor</title>
   	 <description>(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and magnetic moment inherent in electrons. Toshiba has fabricated a spintronics cell and verified its stable performance for the first time, and will present full details of the cell and its technologies on  December 7 (EST), at the International Electronics Devices Meeting in Baltimore, Maryland, U.S.A.</description>
     <link>http://www.physorg.com/news179572434.html</link>
	 <category>Technology</category>
	 <pubDate>Wed, 09 Dec 2009 09:26:31 EST</pubDate>
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     <title>Flexible OLED display one-step closer with organic light emitting material direct writing</title>
   	 <description>(PhysOrg.com) -- One of the more interesting methods of pattern transfer available for a number of applications right now is Laser Induced Forward Transfer (LIFT). However, when working with organic material, there are some drawbacks to LIFT, as well as other drawbacks to making use of a high threshold UV or IR laser to effect the transfer. `Besides thermal degradation,` Seung Hwan Ko tells PhysOrg.com, `high laser threshold laser can also induce mechanical cracks on transfer material and problems in edge sharpness.`</description>
     <link>http://www.physorg.com/news144340467.html</link>
	 <category>Physics</category>
	 <pubDate>Mon, 27 Oct 2008 15:34:27 EST</pubDate>
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     <title>Creating a memory device out of paper</title>
   	 <description>(PhysOrg.com) -- As technology continues to shrink, and as memory needs become more demanding, the industry dealing with microelectronics requires devices that are cost-efficient and lightweight. And, while organic materials have shown some promise, they still lack some of the essential qualities needed for application in a wide variety of fields. `The longest time that has lasted from organic memories,` Rodrigo Martins tells PhysOrg.com, `is about 5,000 seconds. This just doesn`t allow for practical use in many cases as a memory device.`</description>
     <link>http://www.physorg.com/news146905642.html</link>
	 <category>Physics</category>
	 <pubDate>Wed, 26 Nov 2008 07:07:22 EST</pubDate>
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     <title>Nano-designed transistors with disordered materials, but high performance</title>
   	 <description>The Holy Grail for transistor designers has been the requirement to be able to get high performance at reduced costs over very large substrate areas. Transistors on cheap and flexible substrates like glass and plastics are currently unable to deliver such performance and therefore do not lend themselves to seamless monolithic integration of increased electronic functions on human interface devices (displays and sensors). </description>
     <link>http://www.physorg.com/news128946262.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Fri, 02 May 2008 11:24:22 EST</pubDate>
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     <title>Light-generating transistors to power labs on chips</title>
   	 <description>(PhysOrg.com) -- What started out as 'blue-sky' thinking by a group of European researchers could ultimately lead to the commercial mass production of a new generation of optoelectronic components for devices ranging from mobile laboratories to mobile phones. </description>
     <link>http://www.physorg.com/news179765431.html</link>
	 <category>Physics</category>
	 <pubDate>Fri, 11 Dec 2009 14:51:12 EST</pubDate>
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