http://www.physorg.com/ en-us Physorg.com internet news portal provides the latest news on science including: Physics, Nanotechnology, Life Sciences, Space Science, Earth Science, Environment, Health and Medicine. (PhysOrg.com) -- Researchers at the University of Tokyo have developed a non-volatile memory that has the same basic structure as a flash memory but is made from cheap, flexible, organic materials. http://www.physorg.com/news180259614.html Technology Thu, 17 Dec 2009 08:07:41 EST news180259614 Samsung Electronics announced that it is now sampling its 16-gigabit (Gb) NAND flash memory with customers - the first NAND flash using 50 nanometer process technology. http://www.physorg.com/news87054964.html Electronics Wed, 03 Jan 2007 13:56:04 EST news87054964 Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), offering the largest density of any NAND flash chip, are available from today, and 16Gb chip (2GB) products, the current mainstream density, will be available in July in Japan. The 32Gb chips will first be applied to memory cards and USB memories and subsequently extended to embedded products. http://www.physorg.com/news160067536.html Technology Mon, 27 Apr 2009 16:13:29 EST news160067536 SanDisk announced it has begun production shipments of flash memory cards based on the company's advanced X4 flash memory technology. This innovative new technology holds four bits of data in each memory cell, twice as many as the cells in conventional multi-level cell (MLC) NAND (2-bits-per-cell) memory chips. http://www.physorg.com/news174919620.html Electronics Fri, 16 Oct 2009 14:10:01 EST news174919620 SanDisk today announced that it expects to see the launch of the next generation of NAND flash memory this quarter as it begins the transition from 70 nanometer (nm) to 56nm multi-level cell (MLC) flash memory chips at Fab 3, the 300mm wafer fabrication facility that is located at Toshiba`s Yokkaichi Operations near Nagoya, Japan. In the first half of this year, SanDisk intends to start shipping products with the industry`s highest available density of single-chip MLC NAND flash memory. http://www.physorg.com/news88875168.html Electronics Wed, 24 Jan 2007 15:32:48 EST news88875168 (PhysOrg.com) -- Until Oct. 24, NASA's Mars Exploration Rover had gone more than six months without an episode of amnesia-like symptoms like those that appeared on four occasions earlier this year. http://www.physorg.com/news176195599.html Space & Earth Sat, 31 Oct 2009 08:14:12 EST news176195599 SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan. http://www.physorg.com/news121535769.html Technology Wed, 06 Feb 2008 15:56:09 EST news121535769 SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough introduction is expected to quickly bring to market advanced technologies that will enable greater capacities and reduce manufacturing costs for products ranging from memory cards to Solid State Drives (SSD). http://www.physorg.com/news153597019.html Nanotechnology Wed, 11 Feb 2009 17:50:51 EST news153597019 A novelty fast food product line of 1GB USB flash memory is introduced by Green House of Japan is introduced. Soon you will be able to order a hamburger, pizza, hot dog or sandwich flash memory drive to enhance your on-the-go image. http://www.physorg.com/news110730288.html Electronics Thu, 04 Oct 2007 15:24:48 EST news110730288 Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies. http://www.physorg.com/news96729454.html Electronics Wed, 25 Apr 2007 14:17:34 EST news96729454 Toshiba today announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions. http://www.physorg.com/news144429011.html Technology Tue, 28 Oct 2008 16:10:11 EST news144429011 Toshiba Corporation today announced the launch of the world's first 64GB SDXC Memory Card with the world's fastest data transfer rate compliant with the new SD Memory Standard Ver. 3.00, UHS 104. http://www.physorg.com/news168622732.html Electronics Tue, 04 Aug 2009 16:40:03 EST news168622732 (PhysOrg.com) -- SanDisk one of the global leaders in flash storage cards is in the development stage of manufacturing a 128 gigabyte micro-SD card for cell phones. According to Deccan Herald of India, SanDisk´s Chief Operating Officer, Sanjay Mehrotra, "the tiny thumb-nail size micro-SD card will have the storage capacity equal to today´s PCs." Mr. Mehrotra visited SanDisk´s India Design Centre in Bangladore responsible for developing the design of flash memory cards. http://www.physorg.com/news143893844.html Electronics Wed, 22 Oct 2008 11:30:44 EST news143893844 Samsung Electronics, the world leader in advanced semiconductor technology, announced today that it is introducing software designed to optimize the high performance features of its proprietary embedded flash memories: OneNAND, Flex-OneNAND and moviNAND, in smart phones, using the major mobile operating systems - Windows Mobile(CE), Symbian, Linux, and RTOS (real-time operating system). http://www.physorg.com/news137855949.html Electronics Wed, 13 Aug 2008 14:19:09 EST news137855949 Toshiba Corporation today announced the launch of 32GB embedded NAND flash memory modules that offer the largest density yet announced plus full compliance with the e-MMC and eSD standards. The embedded devices are designed for application in mobile digital consumer products, including mobile phones and video cameras. Samples will be available in September 2008, and mass production will start in the fourth quarter. http://www.physorg.com/news137340847.html Electronics Thu, 07 Aug 2008 15:14:07 EST news137340847