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<title>PHYSorg.com: PHYSorg news tagged with: gallium arsenide</title>
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     <title>Sharp Develops Solar Cell with World's Highest Conversion Efficiency of 35.8%</title>
   	 <description>Sharp Corporation has achieved the world's highest solar cell conversion efficiency (for non-concentrator solar cells) of 35.8% using a triple-junction compound solar cell.</description>
     <link>http://www.physorg.com/news175452895.html</link>
	 <category>Technology</category>
	 <pubDate>Thu, 22 Oct 2009 17:55:22 EST</pubDate>
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     <title>Fujitsu Develops Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset</title>
   	 <description>Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the range of 70 to 100 GHz, for which widespread usage is expected to grow. The new transceiver amplifier chipset features a GaN HEMT-based high-output transmitter amplifier and high-sensitivity receiver amplifier.</description>
     <link>http://www.physorg.com/news173555471.html</link>
	 <category>Technology</category>
	 <pubDate>Wed, 30 Sep 2009 19:40:01 EST</pubDate>
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     <title>Discovery brings new type of fast computers closer to reality</title>
   	 <description>Physicists at UC San Diego have successfully created speedy integrated circuits with particles called "excitons" that operate at commercially cold temperatures, bringing the possibility of a new type of extremely fast computer based on excitons closer to reality.</description>
     <link>http://www.physorg.com/news173280934.html</link>
	 <category>Physics</category>
	 <pubDate>Sun, 27 Sep 2009 14:36:05 EST</pubDate>
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     <title>Graphene and gallium arsenide: Two perfect partners find each other</title>
   	 <description>It is the marriage of two top candidates for the electronics of the future, both excentric and extremely interesting: Graphene, one of the partners, is an extremely thin fellow and besides, very young.</description>
     <link>http://www.physorg.com/news172305470.html</link>
	 <category>Physics</category>
	 <pubDate>Wed, 16 Sep 2009 07:38:33 EST</pubDate>
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     <title>Graphene -- the copy beats the original</title>
   	 <description>(PhysOrg.com) -- The first artificial graphene has been created at the NEST laboratory of the Italian Institute for the Physics of Matter (INFM-CNR) in Pisa. It is sculpted on the surface of a gallium-arsenide semiconductor, to which it grants the extraordinary properties of the original graphene. Published as a Rapid Communication on Phys.Rev.B, the research has been highlighted by the American Physical Society.</description>
     <link>http://www.physorg.com/news167052354.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Fri, 17 Jul 2009 12:26:41 EST</pubDate>
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     <title>GaAs self-assembled nanowires could make chips smaller and faster</title>
   	 <description>(PhysOrg.com) -- Researchers at the University of Illinois have found a new way to make transistors smaller and faster. The technique uses self-assembled, self-aligned, and defect-free nanowire channels made of gallium arsenide.</description>
     <link>http://www.physorg.com/news159453806.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 20 Apr 2009 13:43:49 EST</pubDate>
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     <title>Operating quantum memory at room temperature</title>
   	 <description>Quantum dots, along with quantum wires, have been attracting notice over the past decade as possible building blocks of quantum information processing. Indium arsenide quantum dots (InAs) can be used for memory operations in devices made from gallium arsenide and aluminum gallium arsenide (known as GaAs/AlGaAs devices). The problem is that at room temperature  - the experiments are usually done at lower temperatures, the memory operation of these devices suffers, unless there are multiple quantum dot layers.</description>
     <link>http://www.physorg.com/news138882516.html</link>
	 <category>Physics</category>
	 <pubDate>Mon, 25 Aug 2008 11:28:36 EST</pubDate>
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