<?xml version="1.0" encoding="iso-8859-1"?>
<?xml-stylesheet type="text/xsl" href="http://www.physorg.com/tmpl/default/css/default/feedRSS.xsl"?>
<rss version="2.0">
<channel>
<title>PHYSorg.com: PHYSorg news tagged with: optical microscopy</title>
<link>http://www.physorg.com/</link>
<language>en-us</language> 
<description>Physorg.com internet news portal provides the latest news on science including: Physics, Nanotechnology, Life Sciences, Space Science, Earth Science, Environment, Health and Medicine.</description>

 <item>
     <title>Imaging a catalyst one atom at a time</title>
   	 <description>(PhysOrg.com) -- The catalytic processes that facilitate the production of many chemicals and fuels could become much more environmentally friendly thanks to a breakthrough achieved by researchers from Lehigh and Rice Universities.</description>
     <link>http://www.physorg.com/news177006900.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 09 Nov 2009 17:20:09 EST</pubDate>
	 <guid isPermaLink="false">news177006900</guid>
</item>
<item>
     <title>Tension in the nanoworld</title>
   	 <description>(PhysOrg.com) -- A joint team of researchers at CIC nanoGUNE (San Sebastian, Spain) and the Max Planck Institutes of Biochemistry and Plasma Physics (Munich, Germany) report the non-invasive and nanoscale resolved infrared mapping of strain fields in semiconductors. The method, which is based on near-field microscopy, opens new avenues for analyzing mechanical properties of high-performance materials or for contact-free mapping of local conductivity in strain-engineered electronic devices (Nature Nanotechnology, advanced online publication, 11 Jan. 2009).</description>
     <link>http://www.physorg.com/news151930864.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Fri, 23 Jan 2009 11:01:37 EST</pubDate>
	 <guid isPermaLink="false">news151930864</guid>
</item>
<item>
     <title>Tension in the nanoworld: Infrared light visualizes nanoscale strain fields</title>
   	 <description>(PhysOrg.com) -- A joint team of researchers at CIC nanoGUNE (San Sebastian, Spain) and the Max Planck Institutes of Biochemistry and Plasma Physics (Munich, Germany) report the non-invasive and nanoscale resolved infrared mapping of strain fields in semiconductors. The method, which is based on near-field microscopy, opens new avenues for analyzing mechanical properties of high-performance materials or for contact-free mapping of local conductivity in strain-engineered electronic devices (Nature Nanotechnology, advanced online publication, 11 Jan. 2009).</description>
     <link>http://www.physorg.com/news150998994.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 12 Jan 2009 16:09:54 EST</pubDate>
	 <guid isPermaLink="false">news150998994</guid>
</item>


</channel>
</rss>

