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<title>PHYSorg.com: PHYSorg news tagged with: transistors</title>
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     <title>Taiwan unveils super-tiny microchip</title>
   	 <description>Taiwan has developed tiny microchips that could lead to lighter and cheaper laptops or mobile phones, researchers and observers said Wednesday.</description>
     <link>http://www.physorg.com/news180166164.html</link>
	 <category>Technology</category>
	 <pubDate>Wed, 16 Dec 2009 06:30:01 EST</pubDate>
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     <title>NEC Integrates NanoBridge in the Cu Interconnects of Si LSI </title>
   	 <description>NEC Corporation, in collaboration with the National Institute of Materials Science, today announced the successful integration of NanoBridge, a solid electrolyte non-volatile crossbar switch, in Cu interconnects placed on CMOS logic. This development enables the realization of high performance non-volatile programmable logic at a low cost.</description>
     <link>http://www.physorg.com/news180038763.html</link>
	 <category>Technology</category>
	 <pubDate>Mon, 14 Dec 2009 19:00:01 EST</pubDate>
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     <title>Fujitsu Announces World's First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes</title>
   	 <description>Fujitsu Laboratories today announced that, using carbon nanotubes as heat-dissipation material in amplifier transistors, Fujitsu has become the first to achieve the successful operation of high-frequency, high-power (100W-class) flip-chip amplifiers employing carbon nanotubes, for mobile base stations designed for fourth-generation (4G, IMT-Advanced) systems.</description>
     <link>http://www.physorg.com/news179762688.html</link>
	 <category>Technology</category>
	 <pubDate>Fri, 11 Dec 2009 14:05:53 EST</pubDate>
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     <title>Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI </title>
   	 <description>(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS technology. The technology opens the door to a future generation of LSI fabricated with bulk CMOS technology, the mainstream technology in today's LSI, by achieving the world's first practical fabrication process applicable to 20nm generation CMOS devices.</description>
     <link>http://www.physorg.com/news179592956.html</link>
	 <category>Technology</category>
	 <pubDate>Wed, 09 Dec 2009 15:03:32 EST</pubDate>
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     <title>Toshiba develops essential technology for spintronics-based MOS field-effect transistor</title>
   	 <description>(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and magnetic moment inherent in electrons. Toshiba has fabricated a spintronics cell and verified its stable performance for the first time, and will present full details of the cell and its technologies on  December 7 (EST), at the International Electronics Devices Meeting in Baltimore, Maryland, U.S.A.</description>
     <link>http://www.physorg.com/news179572434.html</link>
	 <category>Technology</category>
	 <pubDate>Wed, 09 Dec 2009 09:26:31 EST</pubDate>
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     <title>Life after silicon: Using exotic materials to help microchips keep improving</title>
   	 <description>(PhysOrg.com) -- The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon transistors are now getting so small that they`re running up against fundamental physical limits: soon, it will be impossible to squeeze any better performance out of them. </description>
     <link>http://www.physorg.com/news179518970.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 08 Dec 2009 18:25:46 EST</pubDate>
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     <title>Gallium nitride transistor could replace silicon</title>
   	 <description>(PhysOrg.com) -- A Cornell researcher has created an extremely efficient transistor made from gallium nitride, which may soon replace silicon as king of semiconductors for power applications.</description>
     <link>http://www.physorg.com/news179518616.html</link>
	 <category>Physics</category>
	 <pubDate>Tue, 08 Dec 2009 18:17:33 EST</pubDate>
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     <title>Panasonic Develops A Gallium Nitride (GaN) Inverter IC  for Motor Drive with High Efficiency</title>
   	 <description>Panasonic today announced the development of a Gallium Nitride (GaN) -based monolithic inverter integrated circuit (IC) for motor drive. The integrated six GaN-based transistors can be independently driven in a single chip, which enables successful motor drive with high efficiency. The new GaN inverter IC is applicable to motor drive in a variety of consumer electronics.</description>
     <link>http://www.physorg.com/news179516515.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 08 Dec 2009 18:00:05 EST</pubDate>
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     <title>Scientists build 'single-atom transistor'</title>
   	 <description>(PhysOrg.com) -- Researchers from Helsinki University of Technology (Finland), University of New South Wales (Australia), and University of Melbourne (Australia) have succeeded in building a working transistor, whose active region composes only of a single phosphorus atom in silicon. The results have just been published in Nano Letters.</description>
     <link>http://www.physorg.com/news179331125.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Sun, 06 Dec 2009 14:16:01 EST</pubDate>
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     <title>Glasgow scientists predict the unpredictable to guide future nano-chip design</title>
   	 <description>Scientists at the University of Glasgow, in collaboration with colleagues from Edinburgh, Manchester, Southampton and York universities, have developed technology which will help microchip designers create future integrated circuits.</description>
     <link>http://www.physorg.com/news178721729.html</link>
	 <category>Technology</category>
	 <pubDate>Sun, 29 Nov 2009 13:20:02 EST</pubDate>
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     <title>Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub</title>
   	 <description>Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures while employing chemical-vapor deposition (CVD) techniques which are in widespread use in semiconductor manufacturing.</description>
     <link>http://www.physorg.com/news178552799.html</link>
	 <category>Technology</category>
	 <pubDate>Fri, 27 Nov 2009 14:00:59 EST</pubDate>
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     <title>New 'finFETs' promising for smaller transistors, more powerful chips</title>
   	 <description>(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create faster and more compact circuits and computer chips.</description>
     <link>http://www.physorg.com/news177088957.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 10 Nov 2009 15:24:39 EST</pubDate>
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     <title>Micro Sparky: Engineering the tiniest Sun Devil</title>
   	 <description>(PhysOrg.com) -- An Arizona State University engineering student may have found the tiniest - yet most cleverly inventive - way to show school spirit.</description>
     <link>http://www.physorg.com/news176106977.html</link>
	 <category>Technology</category>
	 <pubDate>Fri, 30 Oct 2009 08:00:01 EST</pubDate>
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     <title>SEMATECH Reports New Approach to Simulate Transistor Noise</title>
   	 <description>Researchers from SEMATECH's Front End Processes (FEP) program have developed a comprehensive transistor noise model capable of extracting defect characteristics from low frequency noise data in advanced gate stack transistors using both conventional and novel dielectrics. The proposed model is a key step towards identifying and minimizing defects to support aggressive device scaling. SEMATECH`s results were presented at the IEEE Integrated Reliability Workshop (IRW) on Thursday, October 22, in Lake Tahoe, CA. </description>
     <link>http://www.physorg.com/news175882600.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 27 Oct 2009 17:40:01 EST</pubDate>
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     <title>Researchers create all-electric spintronics</title>
   	 <description>A multidisciplinary team of UC researchers is the first to find an innovative and novel way to control an electron's spin orientation using purely electrical means.</description>
     <link>http://www.physorg.com/news175871026.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Tue, 27 Oct 2009 14:05:04 EST</pubDate>
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     <title>Researchers create molecular diode</title>
   	 <description>(PhysOrg.com) -- Recently, at Arizona State University`s Biodesign Institute, N.J. Tao and collaborators have found a way to make a key electrical component on a phenomenally tiny scale. Their single-molecule diode is described in this week`s online edition of Nature Chemistry.</description>
     <link>http://www.physorg.com/news175415776.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Thu, 22 Oct 2009 07:37:08 EST</pubDate>
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     <title>INL, ISU team on nanoparticle production breakthrough</title>
   	 <description>Every hour, the sun floods Earth with more energy than the entire world consumes in a year. Yet solar power accounts for less than 0.002 percent of all electricity generated in the United States, primarily because photovoltaic cells remain expensive and relatively inefficient.</description>
     <link>http://www.physorg.com/news175195934.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 19 Oct 2009 18:32:55 EST</pubDate>
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     <title>Running electronics using light</title>
   	 <description>(PhysOrg.com) -- "If you open up almost any electronic gadget, you will see various elements that operating using electric circuitries," Nader Engheta tells PhysOrg.com. "Many of them have different functionalities, such as inductors, capacitors, resistors, transistors, and so forth. These well-known elements have been around for decades. But what if you could bring these concepts to the nanoscale, and what if they could operate with light instead of electricity?"</description>
     <link>http://www.physorg.com/news175161170.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 19 Oct 2009 08:53:59 EST</pubDate>
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<item>
     <title>Computers Faster Only for 75 More Years? Physicists determine nature's limit to making faster processors</title>
   	 <description>With the speed of computers so regularly seeing dramatic increases in their processing speed, it seems that it shouldn't be too long before the machines become infinitely fast -- except they can't.</description>
     <link>http://www.physorg.com/news174750105.html</link>
	 <category>Physics</category>
	 <pubDate>Wed, 14 Oct 2009 14:42:19 EST</pubDate>
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</item>
<item>
     <title>Researchers create molecular diode</title>
   	 <description>Recently, at Arizona State University's Biodesign Institute, N.J. Tao and collaborators have found a way to make a key electrical component on a phenomenally tiny scale. Their single-molecule diode is described in this week's online edition of Nature Chemistry.</description>
     <link>http://www.physorg.com/news174643920.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Tue, 13 Oct 2009 09:13:07 EST</pubDate>
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     <title>Atomtronic transistor and diode could advance quantum computing</title>
   	 <description>(PhysOrg.com) -- What if atoms could be used to perform the functions currently the province of electronic devices? The goal of atomtronics is to do just that by creating analogues to the common items found in electronic devices. Ron Pepino, a graduate student at JILA and the University of Colorado, believes that he and his colleagues have found a way to create the atomtronic versions of diode and transistor circuits. The work of Pepino, Cooper, Anderson and Holland is described in Physical Review Letters: "Atomtronic Circuits of Diodes and Transistors."</description>
     <link>http://www.physorg.com/news174303837.html</link>
	 <category>Physics</category>
	 <pubDate>Fri, 09 Oct 2009 10:44:44 EST</pubDate>
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     <title>Better control of carbon nanotube 'growth' promising for future electronics</title>
   	 <description>(PhysOrg.com) -- Researchers have overcome a major obstacle in efforts to use tiny structures called carbon nanotubes to create a new class of electronics that would be faster and smaller than conventional silicon-based transistors.</description>
     <link>http://www.physorg.com/news173626785.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Thu, 01 Oct 2009 14:40:28 EST</pubDate>
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     <title>Could a paper transistor offer an alternative to silicon?</title>
   	 <description>(PhysOrg.com) -- As technology advances, scientists look for ways to enhance electronic applications and devices. Indeed, electronics are getting smaller and more diverse. And as this happens, there is an increased requirement for flexibility in transistors, which make the electronic devices we desire work. Unfortunately, silicon and polymers may not fulfill the requirements needed to advance on to the transistors of the future.</description>
     <link>http://www.physorg.com/news172837799.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Tue, 22 Sep 2009 11:30:32 EST</pubDate>
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     <title>SKoreans demonstrate spin-injected field effect transistor</title>
   	 <description> South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.</description>
     <link>http://www.physorg.com/news172478181.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Fri, 18 Sep 2009 07:37:20 EST</pubDate>
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     <title>Two chips in one: Researchers combine microprocessor materials</title>
   	 <description>(PhysOrg.com) -- An MIT team led by Tom&amp;aacute;s Palacios, assistant professor in the Department of Electrical Engineering and Computer Science, has succeeded in combining two semiconductor materials, silicon and gallium nitride, that have different and potentially complementary characteristics, into a single hybrid microchip. This is something researchers have been attempting to do for decades. </description>
     <link>http://www.physorg.com/news172316465.html</link>
	 <category>Technology</category>
	 <pubDate>Wed, 16 Sep 2009 10:43:14 EST</pubDate>
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     <title>New material for nanoscale computer chips</title>
   	 <description>Nanochemists from the Chinese Academy of Sciences and Nano-Science Center, Department of Chemistry at University of Copenhagen have developed nanoscale electric contacts out of organic and inorganic nanowires.  In the contact they have crossed the wires like Mikado sticks and coupled several contacts together in an electric circuit. In this way they have produced prototype computer electronics on the nanoscale.</description>
     <link>http://www.physorg.com/news169727773.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 17 Aug 2009 12:10:02 EST</pubDate>
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     <title>Nanoelectronic transistor combined with biological machine could lead to better electronics</title>
   	 <description>(PhysOrg.com) -- If manmade devices could be combined with biological machines, laptops and other electronic devices could get a boost in operating efficiency.</description>
     <link>http://www.physorg.com/news169145728.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Mon, 10 Aug 2009 17:56:13 EST</pubDate>
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     <title>IMEC shows optimizations for next-generation transistors</title>
   	 <description>IMEC has achieved promising results in the race to scale CMOS to 22nm and below. The breakthroughs from its transistor scaling programs include a successful integration of the laser-anneal technique in a high-K/metal-gate first process and a step forward towards fabricating aggressively scaled germanium-pFET transistors.</description>
     <link>http://www.physorg.com/news166806206.html</link>
	 <category>Technology</category>
	 <pubDate>Tue, 14 Jul 2009 20:10:01 EST</pubDate>
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     <title>Fundamental flaw in transistor noise theory discovered</title>
   	 <description>(PhysOrg.com) -- Chip manufacturers beware: There's a newfound flaw in our understanding of transistor noise, a phenomenon affecting the electronic on-off switch that makes computer circuits possible. According to the engineers at the National Institute of Standards and Technology who discovered the problem, it will soon stand in the way of creating more efficient, lower-powered devices like cell phones and pacemakers unless we solve it.</description>
     <link>http://www.physorg.com/news162132202.html</link>
	 <category>Physics</category>
	 <pubDate>Thu, 21 May 2009 13:44:00 EST</pubDate>
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     <title>Metal sheets with DNA framework may enable nanocircuits</title>
   	 <description>(PhysOrg.com) -- Using DNA not as a genetic material but as a structural support, Cornell researchers have created thin sheets of gold nanoparticles held together by strands of DNA. The work could prove useful for making thin transistors or other electronic devices.</description>
     <link>http://www.physorg.com/news162056919.html</link>
	 <category>Nanotechnology</category>
	 <pubDate>Wed, 20 May 2009 16:49:21 EST</pubDate>
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