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Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes

Feb 06, 2008 | User rating: 4.3 / 5 after 20 vote(s) | pda version

Intel Corporation and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new, innovative memory technology called Phase Change Memory (PCM). The ...


Pushing the limits of chip miniaturisation

Nov 06, 2007 | User rating: 4.4 / 5 after 25 vote(s) | pda version

Over the last four decades, computer chips have found their way into virtually every electronic device in the world. During that time they have become smaller, cheaper and more powerful, but, for a team of ...


Toshiba Develops 60GHz Receiver Technology Using CMOS Device

Jun 15, 2007 | User rating: 4.8 / 5 after 5 vote(s) | pda version

Toshiba Corporation today announced new technology that opens the way to manufacturing powerful ICs for the millimeter-waveband.


Samsung Begins World's First 60nm-DRAM Mass Production

Mar 02, 2007 | User rating: 3.4 / 5 after 5 vote(s) | pda version

Samsung Electronics announced today that it has begun mass producing the industry’s first 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)–class process technology.


Renesas, Matsushita Develop Technique for Stablizing Operation of 45nm On-Chip SRAM

Feb 13, 2007 | User rating: 4 / 5 after 1 vote(s) | pda version

Renesas Technology and Matsushita Electric Industrial today announced the development of a technique that achieves stable operation with 45nm process generation bulk CMOS for SRAM (Static Random Access Memory) ...


Samsung Develops 1/4 inch 3-megapixel CMOS Image Sensor for Ultra Slim Camera Phones

Dec 22, 2006 | User rating: 3.3 / 5 after 7 vote(s) | pda version

Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, announced the world's first 3-megapixel (M-pixel) CMOS image sensor (CIS) with a 1/4-inch lens aperture that is well suited for ...


Intel Unveils New High-End Server Processors

Aug 29, 2006 | User rating: 1.8 / 5 after 12 vote(s) | pda version

Intel Corporation today unveiled eight new Dual-Core Intel Xeon 7100 series processors designed for multi-processor servers. Previously codenamed "Tulsa," the Dual-Core Intel Xeon processor 7100 series delivers on key requirements ...


Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology

Aug 29, 2006 | User rating: 1.4 / 5 after 20 vote(s) | pda version

Samsung Electronics, the world leader in advanced memory technology, announced today mass production of 1Gigabit (Gb) DDR2 DRAM memory using 80 nanometer (nm) process technology. While monolithic 1Gb DDR2 is ...


In Brief: Abilis Systems, IBM to work together

Jul 05, 2006 | User rating: 1.6 / 5 after 7 vote(s) | pda version

Abilis Systems announced Wednesday that IBM Microelectronics will manufacture its mobile digital TV chips.


Samsung Mass Producing 1Gb Flash Memory, using 70-nm Process

Apr 04, 2006 | User rating: 4.3 / 5 after 8 vote(s) | pda version

Samsung Electronics announced today that it is now mass producing 70nm 1Gb OneNAND, a widely used memory device that provides higher performance over conventional flash devices.


Intel First With 65nm NOR Flash Memory Chips

Apr 04, 2006 | User rating: 3.4 / 5 after 7 vote(s) | pda version

Intel Corporation is the first to sample NOR multi-level cell flash memory chips at 1-gigabit density using its advanced 65-nanometer (nm) process technology. Intel’s NOR Flash memory chips are used in devices ...


Applied Materials Announces Advanced CVD Aluminum Technology

Dec 06, 2005 | pda version

Applied Materials, Inc. today announced its Applied CVD Al process chamber for building current and next-generation high-density interconnects in Flash and DRAM memory chips. Using aluminum deposition technology, which continues ...


Intel, STMicroelectronics Partner To Lower Memory Costs For Cell Phone Makers

Dec 05, 2005 | pda version

STMicroelectronics and Intel Corporation today announced a common flash memory subsystem to lower development costs for handset OEMs and enable them to get to market faster with feature-rich phones.


Intel to build 3.5 billion-dollar plant for 45 nm technology in Israel

Dec 01, 2005 | User rating: 1.5 / 5 after 2 vote(s) | pda version

Intel today announced plans to build a new 300-millimeter wafer fabrication facility at its site in Kiryat Gat, Israel. The new factory, designated Fab 28, will extend Intel’s manufacturing leadership by producing ...


Intel Launches High-Performance 90-nm Multi-Level-Cell Nor Flash Memory

Nov 17, 2005 | pda version

Intel today announced it is shipping in volume the industry’s first 90-nanometer multi-level cell (MLC) NOR flash memory device. The new Intel StrataFlash Cellular Memory (M18) delivers faster performance, higher density ...


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