Search results for 45 nm
TI developes 45-nm chip production process
Jun 12, 2006 |
2.7 / 5 (3) |
0
Texas Instruments said Monday it had developed a 45-nanometer wet lithography process that doubles the number of chips it can produce on a silicon wafer.
Sematech Advances Feasibility of 193 nm Immersion Lithography for 45 nm
Oct 05, 2006 |
3 / 5 (2) |
0
Sematech researchers have successfully used 193 nm immersion technology (193i) at 1.3 numerical aperture (NA) with azimuthal polarization to pattern features narrower than 45 nm half-pitch in multiple orientations simultaneously. ...
Solutions Emerging for Wafer Cleaning at 45 nm and Beyond
May 21, 2007 |
5 / 5 (1) |
0
Potential solutions are starting to emerge for preparing wafers for manufacturing at and beyond the 45 nm technology generation, technologists indicated at a recent industry meeting organized by SEMATECH.
ASML Introduces the Industry's Highest NA Immersion Tool for Volume Chip Production at 45 nm Node
Jul 13, 2005 |
2 / 5 (1) |
0
ASML Holding NV (ASML) today announced a new lithography system with the highest numerical aperture (NA) 1.2 in the semiconductor industry. The ASML TWINSCAN XT:1700i system is a 193 nm immersion scanner capable of volume ...
Breaking the performance barrier of 22-nm CMOS technology
Feb 19, 2008 |
4.2 / 5 (29) |
1
A major initiative has been launched in Europe with a top-ranked project called DUALLOGIC, Dual channel CMOS for (sub)-22 nm high performance logic.
AMD, Partners Produce Test Chip Using EUV Lithography
Feb 26, 2008 |
4.4 / 5 (22) |
4
AMD, working together with its research partner, IBM, announced it has produced a working test chip utilizing Extreme Ultra-Violet (EUV) lithography for the critical first layer of metal connections across the entire chip. ...
Ultra-Dense SRAM cell in 45-nm Low-Cost, Low-Power Conventional Bulk CMOS Technology
Jun 15, 2005 |
2 / 5 (1) |
0
The Crolles2 Alliance today presented a paper* describing the creation, under production conditions, of six-transistor SRAM-bit cells with an area less than 0.25 square microns half the size of earlier solutions using ...
Molecular Switches: Optoelectronic components based on a dye-sensitized TiO2 solar cell
Apr 24, 2006 |
3.4 / 5 (11) |
0
Electronic components must continue to get smaller: Miniaturization has now reached the nanometer scale (10-9 m). In this tiny world, classic semiconductor technology is reaching its limits. We now need switches and other ...
Hybrid nano-CMOS chips could be far denser, but cooler
Jan 16, 2007 |
4.4 / 5 (28) |
0
Hewlett-Packard today announced research that could lead to the creation of field programmable gate arrays (FPGAs) up to eight times denser while using less energy for a given computation than those currently being produced.
SEMATECH and Synopsys to Develop Advanced OPC Models For 45 nm and Below Immersion Lithography
Oct 04, 2005 |
4 / 5 (1) |
0
Synopsys, Inc. and SEMATECH today announced a joint program to develop advanced optical proximity correction (OPC) models that will enable the extension of optical lithography.
Breakthrough Ultra-High-Speed Memory Technology That Solves Scaling Pace Limit in Embedded Memory Design
Feb 10, 2005 |
not rated yet |
0
NEC Electronics Corporation announced that they have succeeded in developing an ultra-high-speed memory technology that solves the design scaling limit caused by noise margin degradation in ultra-high speed embedded memory. ...
Soitec, ATDF to Develop Multi-Gate Field Effect Transistors (MuGFETs) for 45-nm Technology and Beyond
Jan 05, 2005 |
not rated yet |
0
In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility ...
NEC Unveils 90-Nanometer Embedded DRAM Technology
Mar 07, 2005 |
not rated yet |
0
New ZrO2 Dielectric Material Increases Performance of CMOS-Compatible Embedded DRAM NEC Electronics Corporation today announced its new metal insulator metal (MIM) technology for 90 nanometer embedded DRAM ( ...
Toshiba's breakthrough in SSRM technology will Improve Cutting-Edge LSI
Apr 16, 2007 |
4.4 / 5 (26) |
0
Toshiba Corp. today announced that it has achieved a breakthrough in imaging electron-carrier paths and impurities in semiconductors that allows analysis at the 1-nanometer level for the first time. This major ...
Synthetic Capsules Made of Natural Building Blocks
Mar 23, 2009 |
3 / 5 (2) |
0
(PhysOrg.com) -- The basis of all life forms are vesicles: membrane-enclosed, liquid-filled bubbles made of lipids, proteins, and carbohydrates. Cells, which are separated from the surrounding medium by their cell membrane, ...
