Search results for 65nm:
65nm Revolution: Applied Materials Leads the Semiconductor Equipment Industry
Jul 11, 2004 |
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Applied Materials, Inc. showcased the industry's largest portfolio of 65nm chip manufacturing systems at SEMICON West, with a full complement of transistor, interconnect and inspection solutions for fabricating next-generation ...
Intel Opens Leading-Edge 65nm, 300mm High-Volume Wafer Manufacturing Facility In Arizona
Nov 02, 2005 |
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Intel Corporation has re-opened an advanced, high-volume semiconductor manufacturing facility in Chandler, Ariz., converting it to a leading-edge 300mm, 65nm process factory. Called Fab 12, the factory is Intel’s second volume-production ...
IBM Announces Production of Cell Chip at 65nm
Mar 12, 2007 |
4.5 / 5 (6) |
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IBM announced today that the company has begun producing a new, 65 nanometer version of the Cell Broadband Engine at IBM's state-of-the-art East Fishkill, New York microchip production facility.
Intel Builds Static RAM on 65nm Process – Set for Production in 2005
Jan 03, 2005 |
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Intel is successfully demonstrating its next-generation 65-nanometer semiconductor process at the same time it is rolling out the industry's first high-volume 90nm production. Intel expects to ramp its 65nm process in 2005 — o ...
Fujitsu Introduces World-class 65-Nanometer Process Technology for Advanced Server, Mobile Applications
Sep 22, 2005 |
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Fujitsu Microelectronics America, Inc. today announced the availability of its 65-nanometer CS200 and CS200A series for ASIC and COT customers. The CS200 and CS200A, which were built using Fujitsu's leading-edge 65nm CMOS ...
ARM Artisan Low Power IP Offered By IBM, Chartered To Support 65-nm Common Platform
Jun 06, 2005 |
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ARM today announced a collaboration with IBM and Chartered Semiconductor Manufacturing that makes available the ARM Artisan Metro low-power platform for the IBM-Chartered 65-nanometer low-power common process platform. The ...
Hitachi Shows Technical Feasibility Of Perpendicular Magnetic Recording At 610 Gbit/in2
Aug 01, 2008 |
3.7 / 5 (13) |
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Hitachi, Ltd. announced today that it has demonstrated the technical feasibility of magnetic recording at 610 Gbit/in2. This considerably exceeds the previously demonstrated capabilities of current perpendicular recording ...
UMC Develops Ultimate Spacer Process to Enhance MOSFET Device Performance for 65nm and Beyond
Dec 07, 2005 |
2 / 5 (1) |
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UMC today announced that its Central Research and Development Division (CRD) has successfully developed an Ultimate Spacer Process (USP) technology that simultaneously enhances NMOS and PMOS device performance. Devices fabricated ...
AMD, IBM Unveil New, Higher Performance, More Power Efficient 65nm Process Technologies
Dec 06, 2005 |
4.7 / 5 (3) |
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In papers presented at the International Electron Devices Meeting (IEDM) in Washington, D.C., IBM and AMD today detailed their progress in bringing new, advanced semiconductor process technologies and materials to the 65 ...
Texas Instruments Breaks 65nm Leakage Power Barrier with SmartReflex Technologies
Sep 19, 2005 |
4.3 / 5 (3) |
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The potential for leakage power or battery life drain increases dramatically as the industry advances to smaller process node geometries, a challenge that has been viewed as a barrier for developing high-speed, high-integration, ...
Elpida Introduces Industry's First x32-bit 1-Gigabit XDR DRAM
Jan 20, 2009 |
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Elpida, Japan's leading global supplier of Dynamic Random Access Memory, today introduced the industry's first 1-Gigabit XDR DRAM based on a x32-bit configuration.
TSMC Verifies Fully Functional 90 Nanometer Chips Using Immersion Lithography Tools
Dec 22, 2004 |
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Findings Suggests Immersion is Nearly Ready For Production Taiwan Semiconductor Manufacturing Company, said that it used immersion lithography tools to produce fully functional 90nm devices. The finding was presented in a ke ...
Elpida Develops Top-Tier Power Efficient 2Gbps High-Speed DDR3 SDRAM
Jul 15, 2008 |
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Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has developed a top-tier power efficient 1 Gigabit DDR3 SDRAM, which is capable of operating ...
Toshiba develops the world's fastest speed embedded DRAM technology
Feb 06, 2008 |
3.5 / 5 (4) |
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Toshiba Corporation today announced that it has realized the world's fastest circuit technology for embedded DRAM for System LSI, achieving a speed of 833MHz at 32Mb density. The technology will be applied ...
AMD Orders Applied Materials Systems to Equip 300mm Fab
Dec 16, 2004 |
5 / 5 (1) |
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Applied Materials, Inc. received orders from Advanced Micro Devices, Inc. (AMD) for 300mm equipment to manufacture its future advanced 65nm-generation 64-bit microprocessors. The orders cover a broad range of process technologies, ...
