Search results for 65nm:
UMC's Researchers Extend Traditional Nitrided Gate-oxide to beyond the 65nm node
Jun 16, 2005 |
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Nitrogen profile engineering used to downscale effective oxide thickness towards 1nm to improve semiconductor performance UMC, a world leading semiconductor foundry, today announced that its research and development team ...
New Concept for Novel Low-k Film Compatible with 45nm-node LSI Interconnects
Jun 15, 2005 |
3.5 / 5 (2) |
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NEC and MIRAI Project today announced the joint development of a low dielectric-constant (low-k) film, which is realized through a newly developed concept, and is expected to lead to power reduction in advanced LSIs. The ...
IBM, Chartered and Samsung Extend Common Design Enablement Platform for 65-Nanometer Base and Low-Power Processes
Jun 07, 2005 |
1 / 5 (1) |
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IBM, Chartered Semiconductor Manufacturing and Samsung Electronics Co., Ltd. today announced that they are jointly developing design kits for the 65-nanometer base and low-power processes. The agreement further reinforces ...
Applied Materials Unlocks the Future of Defect Inspection with Breakthrough UVision System
Jun 06, 2005 |
1 / 5 (1) |
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Applied Materials, Inc. revolutionizes defect inspection with its innovative Applied UVision system, the semiconductor industry's first laser 3D brightfield inspection tool. The UVision system targets chipmakers' vital need ...
ARM Artisan Low Power IP Offered By IBM, Chartered To Support 65-nm Common Platform
Jun 06, 2005 |
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ARM today announced a collaboration with IBM and Chartered Semiconductor Manufacturing that makes available the ARM Artisan Metro low-power platform for the IBM-Chartered 65-nanometer low-power common process platform. The ...
Samsung Joins IBM and Chartered on 90-Nanometer Common Design-Enablement Platform
May 24, 2005 |
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IBM, Chartered Semiconductor Manufacturing and Samsung Electronics Co., Ltd, today announced that Samsung has licensed the 90-nanometer common design enablement technology utilized by IBM and Chartered. As a result of this ...
IBM and Toppan to Jointly Develop Advanced Photomasks for 45nm
May 19, 2005 |
5 / 5 (1) |
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Goal Is Early Establishment of 45nm Photomask Production Process IBM Corporation and Toppan Printing Co., Ltd. today announced an agreement to jointly develop photomasks for next generation, 45-nanometer semiconductor manufac ...
TSMC Qualifies Applied Materials' Gate Stack System for Its Leading-Edge 65nm Transistor Processes
May 06, 2005 |
2.5 / 5 (4) |
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Applied Materials, Inc. announced today that Taiwan Semiconductor Manufacturing Co. (TSMC) has qualified the Applied Centura Gate Stack system with DPN (decoupled plasma nitridation) technology for all of its 65nm-generation ...
TSMC Unveils Nexsys 65nm Process Technology Plans
May 03, 2005 |
2 / 5 (1) |
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Taiwan Semiconductor Manufacturing Company, unveiled its newest semiconductor manufacturing process today at a Technology Symposium attended by over 400 of the industry’s leading IC companies. First wafers are expected in ...
Freescale, Philips and STMicroelectronics Expand Industry's Largest R&D Alliance
Apr 11, 2005 |
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The Crolles2 Alliance partners STMicroelectronics, Philips and Freescale Semiconductor have reached a preliminary agreement to cooperate on the creation and validation of high-level System-on-Chip (SoC) intellectual property ...
OnWafer Launches Latest Wireless SensorWafer Product Designed to Deliver Unmatched Process Control for Sub-100-nm Photol
Mar 10, 2005 |
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In a move designed to further extend its leadership in process zone control, OnWafer Technologies kicked off the 35th annual SPIE Microlithography 2005 conference by announcing its fourth-generation (G4) wireless BakeTemp ...
Infineon Presents New Low-Power Circuit Techniques for 120-nm and 90-nm CMOS Technologies with Reduced Leakage
Feb 09, 2005 |
4 / 5 (1) |
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At the IEEE International Solid State Circuits Conference 2005 in San Francisco (February 6 - 10, 2005), Infineon Technologies AG (FSE/NYSE: IFX) presents novel circuit techniques for leakage current reduction in 120nm and ...
IBM and Chartered Extend Technology Development Agreement to 45 Nanometer
Jan 24, 2005 |
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IBM and Chartered Semiconductor Manufacturing today announced they have signed an extension to their existing technology agreement, formally expanding their joint development efforts to 45-nanometer (nm) bulk CMOS process ...
Intel Builds Static RAM on 65nm Process – Set for Production in 2005
Jan 03, 2005 |
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Intel is successfully demonstrating its next-generation 65-nanometer semiconductor process at the same time it is rolling out the industry's first high-volume 90nm production. Intel expects to ramp its 65nm process in 2005 — o ...
TSMC Verifies Fully Functional 90 Nanometer Chips Using Immersion Lithography Tools
Dec 22, 2004 |
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Findings Suggests Immersion is Nearly Ready For Production Taiwan Semiconductor Manufacturing Company, said that it used immersion lithography tools to produce fully functional 90nm devices. The finding was presented in a ke ...
